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RGT8NS65DGTL
Part number：
RGT8NS65DGTL
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
ROHM Semiconductor
describe：
IGBT TRENCH FS 650V 8A LPDS
package：
Cut Tape (CT)
ROHS status：
Yes
currency：
USD
PDF:
BUY NOW add to cart
inventory 1600
minimum : 1
quantity
unit price
price
1
2.03
2.03
10
1.29
12.9
100
0.87
87
500
0.7
350
specifications
  • Part Status
    Active
  • Mounting Type
    Surface Mount
  • Power - Max
    65 W
  • Operating Temperature
    -40°C ~ 175°C (TJ)
  • Package / Case
    TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package
    LPDS
  • Voltage - Collector Emitter Breakdown (Max)
    650 V
  • Current - Collector (Ic) (Max)
    8 A
  • Input Type
    Standard
  • Reverse Recovery Time (trr)
    40 ns
  • IGBT Type
    Trench Field Stop
  • Vce(on) (Max) @ Vge, Ic
    2.1V @ 15V, 4A
  • Test Condition
    400V, 4A, 50Ohm, 15V
  • Current - Collector Pulsed (Icm)
    12 A
  • Switching Energy
    -
  • Gate Charge
    13.5 nC
  • Td (on/off) @ 25°C
    17ns/69ns
  • +86-755-82564498

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