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GT50N322A
Part number：
GT50N322A
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
Toshiba Semiconductor and Storage
describe：
IGBT 1000V 50A TO-3P
package：
Tray
ROHS status：
Yes
currency：
USD
PDF:
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inventory 1609
minimum : 1
quantity
unit price
price
1
5.54
5.54
50
2.91
145.5
100
2.66
266
500
2.21
1105
1000
2.19
2190
specifications
  • Part Status
    Active
  • Mounting Type
    Through Hole
  • Power - Max
    156 W
  • Operating Temperature
    150°C (TJ)
  • Package / Case
    TO-3P-3, SC-65-3
  • Supplier Device Package
    TO-3P(N)
  • Voltage - Collector Emitter Breakdown (Max)
    1000 V
  • Current - Collector (Ic) (Max)
    50 A
  • Input Type
    Standard
  • Reverse Recovery Time (trr)
    800 ns
  • IGBT Type
    -
  • Vce(on) (Max) @ Vge, Ic
    2.8V @ 15V, 60A
  • Test Condition
    -
  • Current - Collector Pulsed (Icm)
    120 A
  • Switching Energy
    -
  • Td (on/off) @ 25°C
    -
  • +86-755-82564498

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