collect compare
GT30N135SRA,S1E
Part number：
GT30N135SRA,S1E
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
Toshiba Semiconductor and Storage
describe：
IGBT 1350V 60A TO-247
package：
Tube
ROHS status：
Yes
currency：
USD
PDF:
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inventory 1633
minimum : 1
quantity
unit price
price
1
4.27
4.27
10
3.24
32.4
30
2.93
87.9
120
2.66
319.2
270
2.55
688.5
510
2.47
1259.7
1020
2.41
2458.2
2520
2.34
5896.8
specifications
  • Part Status
    Active
  • Mounting Type
    Through Hole
  • Power - Max
    348 W
  • Operating Temperature
    175°C (TJ)
  • Package / Case
    TO-247-3
  • Supplier Device Package
    TO-247
  • Voltage - Collector Emitter Breakdown (Max)
    1350 V
  • Current - Collector (Ic) (Max)
    60 A
  • Input Type
    Standard
  • IGBT Type
    -
  • Vce(on) (Max) @ Vge, Ic
    2.6V @ 15V, 60A
  • Test Condition
    300V, 60A, 39Ohm, 15V
  • Current - Collector Pulsed (Icm)
    120 A
  • Switching Energy
    -, 1.3mJ (off)
  • Gate Charge
    270 nC
  • Td (on/off) @ 25°C
    -
  • +86-755-82564498

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