collect compare
GT30J341,Q
Part number：
GT30J341,Q
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
Toshiba Semiconductor and Storage
describe：
IGBT 600V 59A TO-3P
package：
Tray
ROHS status：
Yes
currency：
USD
PDF:
BUY NOW add to cart
inventory 1600
minimum : 100
quantity
unit price
price
100
1.98
198
specifications
  • Part Status
    Last Time Buy
  • Mounting Type
    Through Hole
  • Power - Max
    230 W
  • Operating Temperature
    175°C (TJ)
  • Package / Case
    TO-3P-3, SC-65-3
  • Supplier Device Package
    TO-3P(N)
  • Voltage - Collector Emitter Breakdown (Max)
    600 V
  • Current - Collector (Ic) (Max)
    59 A
  • Input Type
    Standard
  • Reverse Recovery Time (trr)
    50 ns
  • Vce(on) (Max) @ Vge, Ic
    2V @ 15V, 30A
  • Test Condition
    300V, 30A, 24Ohm, 15V
  • Current - Collector Pulsed (Icm)
    120 A
  • Switching Energy
    800µJ (on), 600µJ (off)
  • Td (on/off) @ 25°C
    80ns/280ns
  • +86-755-82564498

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