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GT30J121(Q)
Part number：
GT30J121(Q)
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
Toshiba Semiconductor and Storage
describe：
IGBT 600V 30A 170W TO3PN
package：
Tube
ROHS status：
Yes
currency：
USD
PDF:
BUY NOW add to cart
inventory 1715
minimum : 1
quantity
unit price
price
1
4.24
4.24
10
2.79
27.9
100
1.97
197
500
1.62
810
1000
1.53
1530
specifications
  • Part Status
    Active
  • Mounting Type
    Through Hole
  • Power - Max
    170 W
  • Package / Case
    TO-3P-3, SC-65-3
  • Supplier Device Package
    TO-3P(N)
  • Voltage - Collector Emitter Breakdown (Max)
    600 V
  • Current - Collector (Ic) (Max)
    30 A
  • Input Type
    Standard
  • IGBT Type
    -
  • Vce(on) (Max) @ Vge, Ic
    2.45V @ 15V, 30A
  • Test Condition
    300V, 30A, 24Ohm, 15V
  • Current - Collector Pulsed (Icm)
    60 A
  • Switching Energy
    1mJ (on), 800µJ (off)
  • Td (on/off) @ 25°C
    90ns/300ns
  • +86-755-82564498

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